H. Ryssel : rechercher sur Z-Library

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1

Carbon Capture for CO2 Emission Reduction in the Cement Industry in Germany

Markewitz,, Zhao,, Ryssel,, Moumin,, Wang,, Sattler,, Robinius,, Stolten,

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 5.26 MB

english, 2019

2

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices

S Strobel, A.J Bauer, M Beichele, H Ryssel

Journal:

Microelectronics Reliability

Année:

2001

Langue:

english

Fichier:

PDF, 547 KB

english, 2001

3

Lossless average inductor current sensor for CMOS integrated DC–DC converters operating at high frequencies

V. R. H. Lorentz, S. E. Berberich, M. März, A. J. Bauer, H. Ryssel, P. Poure, F. Braun

Journal:

Analog Integrated Circuits and Signal Processing

Année:

2010

Langue:

english

Fichier:

PDF, 620 KB

english, 2010

4

Micromechanical ultrasonic liquid nebulizer

R. Paneva, G. Temmel, E. Burte, H. Ryssel

Journal:

Sensors and Actuators A: Physical

Année:

1997

Langue:

english

Fichier:

PDF, 347 KB

english, 1997

5

Light-load efficiency increase in high-frequency integrated DC–DC converters by parallel dynamic width controlling

V. R. H. Lorentz, S. E. Berberich, M. März, A. J. Bauer, H. Ryssel, P. Poure, F. Braun

Journal:

Analog Integrated Circuits and Signal Processing

Année:

2010

Langue:

english

Fichier:

PDF, 442 KB

english, 2010

6

Determination of aluminum diffusion parameters in silicon

Krause, O., Ryssel, H., Pichler, P.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 319 KB

english, 2002

7

Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

A. Fet, V. Häublein, A. J. Bauer, H. Ryssel, L. Frey

Année:

2011

Langue:

english

Fichier:

PDF, 857 KB

english, 2011

8

Degradation of specific aromatic compounds migrating from PEX pipes into drinking water

Ryssel, Sune Thyge, Arvin, Erik, Lützhøft, Hans-Christian Holten, Olsson, Mikael Emil, Procházková, Zuzana, Albrechtsen, Hans-Jørgen

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2015

9

CO2 emission reduction in the cement industry by using a solar calciner

Moumin, Gkiokchan, Ryssel, Maximilian, Zhao, Li, Markewitz, Peter, Sattler, Christian, Robinius, Martin, Stolten, Detlef

Journal:

Renewable Energy

Année:

2019

Langue:

english

Fichier:

PDF, 5.02 MB

english, 2019

10

A comparison of focused ion beam and electron beam induced deposition processes

S. Lipp, L. Frey, C. Lehrer, E. Demm, S. Pauthner, H. Ryssel

Journal:

Microelectronics Reliability

Année:

1996

Langue:

english

Fichier:

PDF, 261 KB

english, 1996

11

Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 621 KB

english, 2011

12

Implantation and annealing of aluminum in 4H silicon carbide

M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, H. Ryssel

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2005

Langue:

english

Fichier:

PDF, 229 KB

english, 2005

13

Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient

M. Beichele, A.J. Bauer, H. Ryssel

Journal:

Microelectronics Reliability

Année:

2001

Langue:

english

Fichier:

PDF, 260 KB

english, 2001

14

Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

F Qian, G Temmel, R Schnupp, H Ryssel

Journal:

Microelectronics Reliability

Année:

1999

Langue:

english

Fichier:

PDF, 402 KB

english, 1999

15

Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone

A.J. Bauer, B. Froeschle, M. Beichele, H. Ryssel

Journal:

Microelectronics Reliability

Année:

1999

Langue:

english

Fichier:

PDF, 874 KB

english, 1999

16

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices

M Herden, A.J Bauer, H Ryssel

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 187 KB

english, 2000

17

Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres

M Beichele, A.J Bauer, H Ryssel

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 201 KB

english, 2000

18

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Journal:

Microelectronics Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 143 KB

english, 2005

19

Electrical reliability aspects of through the gate implanted MOS structures with thin oxides

M.P.M Jank, M Lemberger, A.J Bauer, L Frey, H Ryssel

Journal:

Microelectronics Reliability

Année:

2001

Langue:

english

Fichier:

PDF, 235 KB

english, 2001

20

Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon

E Bär, J Lorenz, H Ryssel

Journal:

Microelectronics Reliability

Année:

1998

Langue:

english

Fichier:

PDF, 233 KB

english, 1998

21

Antiseptic therapy with a polylacticacid–acetic acid matrix in burns

Henning Ryssel, Emre Gazyakan, Günter Germann, Susanne Hellmich, Katrin Riedel, Matthias A. Reichenberger, Christian A. Radu

Journal:

Wound Repair and Regeneration

Année:

2010

Langue:

english

Fichier:

PDF, 222 KB

english, 2010

22

Simulation of Semiconductor Devices and Processes || Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects

Ryssel, Heiner, Pichler, Peter

Année:

1995

Langue:

english

Fichier:

PDF, 547 KB

english, 1995

23

[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - A comparison of focused ion beam and electron beam induced deposition processes

Lipp, S., Frey, L., Lehrer, C., Demm, E., Pauthner, S., Ryssel, H.

Année:

1996

Langue:

english

Fichier:

PDF, 269 KB

english, 1996

24

Die arabische Uebersetzung des Micha in der Pariser und Londoner Polyglotte.

Journal:

Zeitschrift für die Alttestamentliche Wissenschaft

Année:

1885

Langue:

german

Fichier:

PDF, 3.63 MB

german, 1885

25

Die astronomischen Briefe Georgs des Araberbisehofs

Journal:

Zeitschrift für Assyriologie und Vorderasiatische Archäologie

Année:

1893

Langue:

german

Fichier:

PDF, 3.75 MB

german, 1893

26

SAE Technical Paper Series [SAE International Automotive and Transportation Technology Congress and Exposition - (OCT. 01, 2001)] SAE Technical Paper Series - Investigations of Automotive Defroster and Windshield Flow

Becker, Stefan, Lienhart, Hermann, Stoots, Carl, Beier, Max, Hofhaus, Jörn, Schlenz, Dieter, Zemsch, Stefan, Ryssel, Edna

Année:

2001

Langue:

english

Fichier:

PDF, 6.26 MB

english, 2001

27

Linear Stability of Uniform Streaming in Viscoelastic Fluids with Special Emphasis on Liquid Jets and, respectively, Liquid Films and Sheets

Peter O. Brunn, Edna Ryssel

Journal:

ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik

Année:

2000

Langue:

english

Fichier:

PDF, 111 KB

english, 2000

28

Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren

L. Frey, A. Bauer, H. Ryssel

Journal:

Chemie Ingenieur Technik

Année:

2005

Langue:

german

Fichier:

PDF, 102 KB

german, 2005

29

Properties of Al2O3 and SiO2 surface layers on InSb, investigated by backscattering techniques

K. Schmid, H. Ryssel, H. Müller, K.H. Wiedeburg, H. Betz

Journal:

Thin Solid Films

Année:

1973

Langue:

english

Fichier:

PDF, 111 KB

english, 1973

30

Electrical properties of thin reoxidized dual-layer oxides

A.J. Bauer, J. Wang, W.R. Aderhold, E.P. Burte, H. Ryssel

Journal:

Thin Solid Films

Année:

1993

Langue:

english

Fichier:

PDF, 504 KB

english, 1993

31

Ultrasonic transducer with silicon: A well known material with new applications

R. Paneva, G. Temmel, H. Ryssel

Journal:

Sensors and Actuators A: Physical

Année:

1995

Fichier:

PDF, 377 KB

1995

32

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

H. Schmitt, B. Amon, S. Beuer, S. Petersen, M. Rommel, A.J. Bauer, H. Ryssel

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 356 KB

english, 2009

33

Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

L. Boussouar, Z. Ouennoughi, N. Rouag, A. Sellai, R. Weiss, H. Ryssel

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 860 KB

english, 2011

34

Honeycomb voids due to ion implantation in germanium

R.J. Kaiser, S. Koffel, P. Pichler, A.J. Bauer, B. Amon, A. Claverie, G. Benassayag, P. Scheiblin, L. Frey, H. Ryssel

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 563 KB

english, 2010

35

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors

Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Journal:

Microelectronics Reliability

Année:

2003

Langue:

english

Fichier:

PDF, 315 KB

english, 2003

36

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode

M Herden, A.J Bauer, M Beichele, H Ryssel

Journal:

Solid-State Electronics

Année:

2001

Langue:

english

Fichier:

PDF, 178 KB

english, 2001

37

Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers

E. Bär, J. Lorenz, H. Ryssel

Journal:

Microelectronic Engineering

Année:

2002

Langue:

english

Fichier:

PDF, 475 KB

english, 2002

38

Electrodeposition of photoresist: optimization of deposition conditions, investigation of lithographic processes and chemical resistance

R Schnupp, R Baumgärtner, R Kühnhold, H Ryssel

Journal:

Sensors and Actuators A: Physical

Année:

2000

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2000

39

A silicon vibration sensor for tool state monitoring working in the high acceleration range

J. Thomas, R. Kühnhold, R., H. Ryssel

Journal:

Sensors and Actuators A: Physical

Année:

2000

Langue:

english

Fichier:

PDF, 600 KB

english, 2000

40

Indirect-coupling ultraviolet-sensitive photodetector with high electrical gain, fast response, and low noise

F Qian, R Schnupp, C.Q Chen, R Helbig, H Ryssel

Journal:

Sensors and Actuators A: Physical

Année:

2000

Langue:

english

Fichier:

PDF, 251 KB

english, 2000

41

Annealing of boron-implanted silicon using a CW CO2 Laser

P. H. Tsien, S. C. Tsou, M. Takai, D. Röschenthaler, M. Ramin, H. Ryssel, I. Ruge, K. Wittmaack

Journal:

physica status solidi (a)

Année:

1981

Langue:

english

Fichier:

PDF, 609 KB

english, 1981

42

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

M. Rambach, A. J. Bauer, H. Ryssel

Journal:

physica status solidi (b)

Année:

2008

Langue:

english

Fichier:

PDF, 1.50 MB

english, 2008

43

Gold and platinum diffusion: The key to the understanding of intrinsic point defect behavior in silicon

H. Zimmermann, H. Ryssel

Journal:

Applied Physics A: Materials Science & Processing

Année:

1992

Langue:

english

Fichier:

PDF, 1.34 MB

english, 1992

44

The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors

T. Mikolajick, V. Häublein, H. Ryssel

Journal:

Applied Physics A: Materials Science & Processing

Année:

1997

Langue:

english

Fichier:

PDF, 354 KB

english, 1997

45

The investigation of lateral damage effects of ion-implanted layers by back-scattering techniques

K. Schmid, H. Müller, H. Ryssel, I. Ruge

Journal:

Thin Solid Films

Année:

1973

Langue:

english

Fichier:

PDF, 263 KB

english, 1973

46

Quantitative oxide charge determination by photocurrent analysis

M. Rommel, A.J. Bauer, H. Ryssel

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 219 KB

english, 2007

47

The antiemetic activity of high-dose alizapride and high-dose metoclopramide in patients receiving cancer chemotherapy: A prospective, randomized, double-blind trial

Joss, R A, Galeazzi, R L, Bischoff, A K, Pirovino, M, Ryssel, H J, Brunner, K W

Journal:

Clinical Pharmacology & Therapeutics

Année:

1986

Langue:

english

Fichier:

PDF, 480 KB

english, 1986

48

Carrier concentration profiles by high-energy boron ion implantation into silicon

H. Sayama, M. Takai, S. Namba, H. Ryssel

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1991

Langue:

english

Fichier:

PDF, 345 KB

english, 1991

49

Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility

S. Bogen, K. Körber, L. Gong, L. Frey, H. Ryssel

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1995

Langue:

english

Fichier:

PDF, 655 KB

english, 1995

50

Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining

C. Lehrer, L. Frey, S. Petersen, Th. Sulzbach, O. Ohlsson, Th. Dziomba, H.U. Danzebrink, H. Ryssel

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 722 KB

english, 2001